JPH0422876B2 - - Google Patents
Info
- Publication number
- JPH0422876B2 JPH0422876B2 JP19428882A JP19428882A JPH0422876B2 JP H0422876 B2 JPH0422876 B2 JP H0422876B2 JP 19428882 A JP19428882 A JP 19428882A JP 19428882 A JP19428882 A JP 19428882A JP H0422876 B2 JPH0422876 B2 JP H0422876B2
- Authority
- JP
- Japan
- Prior art keywords
- concentration
- substrate
- layer
- single crystal
- internal defects
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 description 26
- 230000007547 defect Effects 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 12
- 239000001301 oxygen Substances 0.000 description 12
- 239000012535 impurity Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 238000005204 segregation Methods 0.000 description 5
- 239000000969 carrier Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005247 gettering Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19428882A JPS5983996A (ja) | 1982-11-05 | 1982-11-05 | 引上げ法によるシリコン単結晶インゴツトの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19428882A JPS5983996A (ja) | 1982-11-05 | 1982-11-05 | 引上げ法によるシリコン単結晶インゴツトの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5983996A JPS5983996A (ja) | 1984-05-15 |
| JPH0422876B2 true JPH0422876B2 (en]) | 1992-04-20 |
Family
ID=16322102
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19428882A Granted JPS5983996A (ja) | 1982-11-05 | 1982-11-05 | 引上げ法によるシリコン単結晶インゴツトの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5983996A (en]) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0777999B2 (ja) * | 1989-11-24 | 1995-08-23 | 信越半導体株式会社 | アンチモンドープ単結晶シリコンの育成方法 |
| JP2745094B2 (ja) * | 1992-07-24 | 1998-04-28 | 三菱マテリアル株式会社 | シリコン単結晶の引上方法 |
| JP4510948B2 (ja) * | 1998-03-25 | 2010-07-28 | シルトロニック・ジャパン株式会社 | シリコン単結晶ウェ―ハの製造方法 |
| FR2994982B1 (fr) * | 2012-09-04 | 2016-01-08 | Commissariat Energie Atomique | Procede de fabrication d'une plaquette en silicium monolithique a multi-jonctions verticales. |
-
1982
- 1982-11-05 JP JP19428882A patent/JPS5983996A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5983996A (ja) | 1984-05-15 |
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